posted on 2016-02-20, 06:26authored byBoyi Fu, Jose Baltazar, Zhaokang Hu, An-Ting Chien, Satish Kumar, Clifford L. Henderson, David M. Collard, Elsa Reichmanis
A series of benzothiadiazole oligothiophene and oligo(thienylene
vinylene) donor–acceptor (D–A) copolymers were synthesized
and characterized. These low optical band gap materials (∼1.5
eV) are capable of absorbing photons in the range of 400–800
nm and exhibit good thermal stability. Their hole mobilities, determined
using an organic field-effect transistor (OFET) architecture, vary
over a range of 3 orders of magnitude and strongly correlate with
the molecular ordering and morphology of the respective thin films.
Spin-coated films of the poly(benzothiadiazole-sexithiophene) PBT6, which exhibits a highly crystalline lamellar π–π
stacked edge-on orientation on the OFET substrate, possesses a hole
mobility of ca. 0.2 cm2/V·s. Vinylene-containing analogs PBT6V2 and PBT6V2′ are amorphous and
exhibit very low mobilities. The molecular weight of PBT6 has a strong influence on the electronic properties: a sample with
a lower molecular weight exhibits a mobility approximately 1 order
of magnitude lower than the high molecular weight homologue, and the
absorption maximum is appreciably blue-shifted. The hole mobility
of PBT6 is further enhanced by a factor of ca. 3 through
fabrication of the OFET by drop casting. OFETs fabricated by this
process exhibit mobilities of up to 0.75 cm2/V·s and ION/OFF ratios in the range of 106–107. These results demonstrate the potential of
incorporating benzothiadiazole units into polythiophene derivatives
to develop high-mobility semiconducting polymers.