Antimony
chalcogenides are widely studied as a light-absorbing
material due to their merits of low toxicity, efficient cost, and
excellent photovoltaic properties. However, the band gaps of antimony
selenide (approximately 1.1 eV) and antimony sulfide (approximately
1.7 eV) both deviate from the optimal detailed balance band gap (∼1.3
eV) for terrestrial single-junction solar cells. Notably, the band
gap of Sb2(S, Se)3 can be tunable in the range
from 1.1 to 1.7 eV, which can cover the detailed balance band gap.
In this work, the vapor transport deposition method with two independent
evaporation sources is used to deposit Sb2(S, Se)3 thin films. By carefully optimizing the evaporation temperature
and the start evaporation time of the Sb2Se3 and Sb2S3 sources, a suitable band gap of
1.33 eV is obtained. Finally, on the basis of the optimal Sb2(S, Se)3 films, Sb2(S, Se)3 solar
cells without a hole transport layer achieved an efficiency of 7.03%.