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Enhanced Spontaneous Emission Rates for Single Isoelectronic Luminescence Centers in Photonic Crystal Cavities
journal contribution
posted on 2020-01-13, 19:33 authored by Ruoxi Wang, Michio Ikezawa, Yoshiki Sakuma, Hiroyuki Takeda, Naoki Ikeda, Yoshimasa Sugimoto, Kazuaki Sakoda, Yuuta Yamada, Yasuaki MasumotoPurcell
effect enhancement of spontaneous emission rates is demonstrated
for isoelectronic trap single-photon emitters. Two-dimensional photonic
crystal slabs with L3 defects were fabricated in nitrogen delta-doped
GaAs. Photoluminescence spectra of each photonic crystal cavity had
a series of sharp and bright lines arising from individual nitrogen
luminescence centers, which was confirmed by Hanbury-Brown and Twiss
measurements. The emission rates of these lines depended on cavity
detuning, indicating a resonant character of the enhancement. The
observed emission lifetime in the cavity was 400 ps, which would be
the shortest lifetime reported so far for luminescence centers in
GaAs.
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Single Isoelectronic Luminescence CentersL 3 defectslifetimeTwo-dimensional photonic crystal slabsPhotonic Crystal Cavities Purcell effect enhancementphotonic crystal cavityemission ratesnitrogen delta-doped GaAsisoelectronic trap single-photon emittersnitrogen luminescence centersEnhanced Spontaneous Emission Rates
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