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Download fileDoping-Free All PtSe2 Transistor via Thickness-Modulated Phase Transition
journal contribution
posted on 2021-01-04, 07:33 authored by Tanmoy Das, Eunyeong Yang, Jae Eun Seo, Jeong Hyeon Kim, Eunpyo Park, Minkyung Kim, Dongwook Seo, Joon Young Kwak, Jiwon ChangAchieving
a high-quality metal contact on two-dimensional (2D)
semiconductors still remains a major challenge due to the strong Fermi
level pinning and the absence of an effective doping method. Here,
we demonstrate high performance “all-PtSe2”
field-effect transistors (FETs) completely free from those issues,
enabled by the vertical integration of a metallic thick PtSe2 source/drain onto the semiconducting ultrathin PtSe2 channel.
Owing to its inherent thickness-dependent semiconductor-to-metal phase
transition, the transferred metallic PtSe2 transforms the
underlying semiconducting PtSe2 into metal at the junction.
Therefore, a fully metallized source/drain and semiconducting channel
could be realized within the same PtSe2 platform. The ultrathin
PtSe2 FETs with PtSe2 vdW contact exhibits excellent
gate tunability, superior mobility, and high ON current accompanied
by one order lower contact resistance compared to conventional Ti/Au
contact FETs. Our work provides a new device paradigm with a low resistance
PtSe2 vdW contact which can overcome a fundamental bottleneck
in 2D nanoelectronics.
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Keywords
metal contactthickness-dependent semiconductor-t...PtSe 2 platformPtSe 2 Transistorsemiconducting PtSe 2device paradigm2 D nanoelectronicssemiconducting channelPtSe 2Thickness-Modulated Phase TransitionFermi levelcontact resistancegate tunabilityPtSe 2 vdW contact exhibitssemiconducting ultrathin PtSe 2 channelultrathin PtSe 2 FETsresistance PtSe 2 vdW contactdoping method