Doping-Free All PtSe2 Transistor via Thickness-Modulated Phase Transition
journal contributionposted on 04.01.2021, 07:33 authored by Tanmoy Das, Eunyeong Yang, Jae Eun Seo, Jeong Hyeon Kim, Eunpyo Park, Minkyung Kim, Dongwook Seo, Joon Young Kwak, Jiwon Chang
Achieving a high-quality metal contact on two-dimensional (2D) semiconductors still remains a major challenge due to the strong Fermi level pinning and the absence of an effective doping method. Here, we demonstrate high performance “all-PtSe2” field-effect transistors (FETs) completely free from those issues, enabled by the vertical integration of a metallic thick PtSe2 source/drain onto the semiconducting ultrathin PtSe2 channel. Owing to its inherent thickness-dependent semiconductor-to-metal phase transition, the transferred metallic PtSe2 transforms the underlying semiconducting PtSe2 into metal at the junction. Therefore, a fully metallized source/drain and semiconducting channel could be realized within the same PtSe2 platform. The ultrathin PtSe2 FETs with PtSe2 vdW contact exhibits excellent gate tunability, superior mobility, and high ON current accompanied by one order lower contact resistance compared to conventional Ti/Au contact FETs. Our work provides a new device paradigm with a low resistance PtSe2 vdW contact which can overcome a fundamental bottleneck in 2D nanoelectronics.
Read the peer-reviewed publication
metal contactthickness-dependent semiconductor-t...PtSe 2 platformPtSe 2 Transistorsemiconducting PtSe 2device paradigm2 D nanoelectronicssemiconducting channelPtSe 2Thickness-Modulated Phase TransitionFermi levelcontact resistancegate tunabilityPtSe 2 vdW contact exhibitssemiconducting ultrathin PtSe 2 channelultrathin PtSe 2 FETsresistance PtSe 2 vdW contactdoping method