Demonstration of Enhanced Switching Variability and
Conductance Quantization Properties in a SiO2 Conducting
Bridge Resistive Memory with Embedded Two-Dimensional MoS2 Material
posted on 2022-05-20, 08:14authored byStavros Kitsios, Panagiotis Bousoulas, Dimitris Spithouris, Maria Kainourgiaki, Menelaos Tsigkourakos, Polyxeni Chatzopoulou, George P. Dimitrakopulos, Philomela Komninou, Dimitris Tsoukalas
In this work, we explore the resistive
switching behavior of a
thin layer of SiO2 with embedded two-dimensional (2D) molybdenum
disulfide, MoS2, in a conductive bridge random access memory
(CBRAM) configuration. The proposed device exhibits enhanced conductance
quantization behavior, reduced variability due to the suppression
of the stochastic filament formation process, and synaptic properties.
The device operates under the bipolar switching mode without the application
of any electroforming procedure; eight different quantized conductance
states were captured during direct current (DC) operation and 10 quantized
states were recorded under pulse measurements. On top of that, both
improved endurance and retention properties as well as linearity of
the synaptic potentiation and depression procedures were attained;
the underlying origins of these effects are attributed to the control
of the Ag ion diffusion barrier through the existence of the atomic
sieve of MoS2. Our work paves the way for the development
of robust memristive elements for the implementation of stable resistive
switching and neuromorphic functionalities.