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Demonstration of Enhanced Switching Variability and Conductance Quantization Properties in a SiO2 Conducting Bridge Resistive Memory with Embedded Two-Dimensional MoS2 Material
journal contributionposted on 2022-05-20, 08:14 authored by Stavros Kitsios, Panagiotis Bousoulas, Dimitris Spithouris, Maria Kainourgiaki, Menelaos Tsigkourakos, Polyxeni Chatzopoulou, George P. Dimitrakopulos, Philomela Komninou, Dimitris Tsoukalas
In this work, we explore the resistive switching behavior of a thin layer of SiO2 with embedded two-dimensional (2D) molybdenum disulfide, MoS2, in a conductive bridge random access memory (CBRAM) configuration. The proposed device exhibits enhanced conductance quantization behavior, reduced variability due to the suppression of the stochastic filament formation process, and synaptic properties. The device operates under the bipolar switching mode without the application of any electroforming procedure; eight different quantized conductance states were captured during direct current (DC) operation and 10 quantized states were recorded under pulse measurements. On top of that, both improved endurance and retention properties as well as linearity of the synaptic potentiation and depression procedures were attained; the underlying origins of these effects are attributed to the control of the Ag ion diffusion barrier through the existence of the atomic sieve of MoS2. Our work paves the way for the development of robust memristive elements for the implementation of stable resistive switching and neuromorphic functionalities.
stable resistive switchingrobust memristive elementsresistive switching behaviorreduced variability dueenhanced switching variability10 quantized statesconductance quantization properties2 subsynaptic propertiesretention propertiesunderlying originsthin layersynaptic potentiationpulse measurementsneuromorphic functionalitiesmolybdenum disulfideimproved enduranceembedded twoelectroforming proceduredirect currentdevice operatesdepression proceduresatomic sieve