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Material Design of Green-Light-Emitting Semiconductors: Perovskite-Type Sulfide SrHfS3
journal contribution
posted on 2019-03-06, 00:00 authored by Kota Hanzawa, Soshi Iimura, Hidenori Hiramatsu, Hideo HosonoA current issue facing light-emitting
devices is a missing suitable
material for green emission. To overcome this, we explore semiconductors
possessing (i) a deep conduction band minimum (CBM) and a shallow
valence band maximum (VBM), (ii) good controllability of electronic
conductivity and carrier polarity, and (iii) a directly allowed band
gap corresponding to green emission. We focus on early transition
metal (eTM)-based perovskites. The eTM cation’s high and stable valence state makes its carrier
controllability easy, and the eTM’s nonbonding
d orbital and the anion’s p orbital, which constitute the deep
CBM and shallow VBM, are favorable to n- and p-type doping, respectively.
To obtain a direct band gap, we applied a scheme that folds the bands
constituting the VBM at the zone boundary to the zone center where
the CBM appears. Orthorhombic SrHfS3 was chosen as the
candidate. The electrical conductivity was tuned from 6 × 10–7 to 7 × 10–1 S·cm–1 with lanthanum (La) doping and to 2 × 10–4 S·cm–1 with phosphorus (P)
doping. Simultaneously, the major carrier polarity was controlled
to n type by La doping and to p type by P doping. Both the undoped
and doped SrHfS3 exhibited intense green photoluminescence
(PL) at 2.37 eV. From the PL blue shift and short lifetime, we attributed
the emission to a band-to-band transition and/or exciton. These results
demonstrate that SrHfS3 is a promising green-light-emitting
semiconductor.