Enhanced Carrier–Exciton Interactions in Monolayer MoS₂ under Applied Voltages

Carrier–exciton interactions in two-dimensional transition metal dichalcogenides (TMDs) is one of the crucial elements for limiting the performance of their optoelectronic devices. Here, we have experimentally studied the carrier–exciton interactions in a monolayer MoS₂-based two-terminal device. Such two-terminal device without a gate electrode is generally considered as invalid to modulate the carrier concentration in active materials, while the photoluminescence peak exhibits a red shift and decay with increasing applied voltages. Time-resolved photoluminescence spectroscopy and photoluminescence multipeak fittings verify that such changes of photoluminescence peaks result from enhanced carrier–exciton interactions with increasing electron concentration induce the charged exciton increasing. To characterize the level of the carrier–exciton interactions, a quantitative relationship between the Raman shift of out-of-plane mode and changes in electron concentration has been established using the mass action model. This work provides an appropriate supplement for understanding the carrier–exciton interactions in TMD-based two-terminal optoelectronic devices.