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Enabling Energy Efficiency and Polarity Control in Germanium Nanowire Transistors by Individually Gated Nanojunctions
journal contribution
posted on 2017-01-12, 00:00 authored by Jens Trommer, André Heinzig, Uwe Mühle, Markus Löffler, Annett Winzer, Paul M. Jordan, Jürgen Beister, Tim Baldauf, Marion Geidel, Barbara Adolphi, Ehrenfried Zschech, Thomas Mikolajick, Walter M. WeberGermanium
is a promising material for future very large scale integration
transistors, due to its superior hole mobility. However, germanium-based
devices typically suffer from high reverse junction leakage due to
the low band-gap energy of 0.66 eV and therefore are characterized
by high static power dissipation. In this paper, we experimentally
demonstrate a solution to suppress the off-state leakage in germanium
nanowire Schottky barrier transistors. Thereto, a device layout with
two independent gates is used to induce an additional energy barrier
to the channel that blocks the undesired carrier type. In addition,
the polarity of the same doping-free device can be dynamically switched
between p- and n-type. The shown germanium nanowire approach is able
to outperform previous polarity-controllable device concepts on other
material systems in terms of threshold voltages and normalized on-currents.
The dielectric and Schottky barrier interface properties of the device
are analyzed in detail. Finite-element drift-diffusion simulations
reveal that both leakage current suppression and polarity control
can also be achieved at highly scaled geometries, providing solutions
for future energy-efficient systems.
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Keywords
Germanium Nanowire Transistorsscale integration transistorsgermanium-based devicesmaterial systemsband-gap energysolutionjunction leakage0.66 eVenergy barrierpolarity controlhole mobilitypower dissipationFinite-element drift-diffusion simulationsIndividually Gated Nanojunctions Germaniumdoping-free deviceundesired carrier typethreshold voltagesdevice layoutgermanium nanowire approachfuturegermanium nanowire Schottky barrier transistorsoff-state leakageEnabling Energy EfficiencySchottky barrier interface propertiespolarity-controllable device conceptsPolarity Control
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