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Electron-Selective Epitaxial/Amorphous Germanium Stack Contact for Organic-Crystalline Silicon Hybrid Solar Cells
journal contribution
posted on 2018-08-22, 00:00 authored by Bingbing Chen, Jianhui Chen, Kunpeng Ge, Linlin Yang, Yanjiao Shen, Wanbing Lu, Li Guan, Lizhi Chu, Qingxun Zhao, Yinglong Wang, Ying Xu, Yaohua MaiCarrier
transport properties can be improved through suppressing
the charge carrier recombination and decreasing the contact resistance
using the proper carrier-selective contact. In this work, an epitaxial/amorphous
germanium (epi/a-Ge) stack thin film is introduced into the rear surface
of organic–inorganic hybrid (OIH) solar cells as an efficient
electron-selective contact. This novel electron-selective stack contact
simultaneously contributes low recombinative and resistive losses
through a three-material system composed of n-type silicon (n-Si),
epitaxial silicon germanium (epi-SiGe), and amorphous germanium (a-Ge),
which promotes the tailoring of band structures, the passivation of
surface dangle bond defects, and the formation of Ohmic contact. The
results show obvious improvement in the open-circuit voltage (Voc) (from 549.5 to 643.0 mV) and fill factor
(FF) (from 70.5 to 75.4%), corresponding to the increase in the power
conversion efficiency (PCE) of OIH solar cells (from 10.3 to 12.9%).
This work indicates novel application of the carrier-selective stack
contact to achieve high-performance OIH solar cells with a simple
and low-temperature process.
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Keywords
germaniumOhmic contactresults showopen-circuit voltagethree-material systemnovel applicationbond defectsOIHelectron-selective contactpower conversion efficiencyOrganic-Crystalline Silicon Hybrid Solar Cells Carrier transport propertiescarrier-selective contactcharge carrier recombinationFFnovel electron-selective stack contactV ocband structurescarrier-selective stack contactPCEcontact resistance643.0 mVn-type silicon
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