β‑Ga2O3 Nanomembrane
Negative Capacitance Field-Effect Transistors with Steep Subthreshold
Slope for Wide Band Gap Logic Applications
Posted on 2017-10-25 - 15:23
Steep-slope
β-Ga2O3 nanomembrane negative
capacitance field-effect transistors (NC-FETs) are demonstrated with
ferroelectric hafnium zirconium oxide in the gate dielectric stack.
Subthreshold slope less than 60 mV/dec at room temperature is obtained
for both forward and reverse gate-voltage sweeps with a minimum value
of 34.3 mV/dec at the reverse gate-voltage sweep and 53.1 mV/dec at
the forward gate-voltage sweep at VDS =
0.5 V. Enhancement-mode operation with a threshold voltage of ∼0.4
V is achieved by tuning the thickness of the β-Ga2O3 membrane. Low hysteresis of less than 0.1 V is obtained.
The steep-slope, low hysteresis, and enhancement-mode β-Ga2O3 NC-FETs are promising as an nFET candidate for
future wide band gap complementary metal-oxide-semiconductor logic
applications.
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Si, Mengwei; Yang, Lingming; Zhou, Hong; Ye, Peide D. (2017). β‑Ga2O3 Nanomembrane
Negative Capacitance Field-Effect Transistors with Steep Subthreshold
Slope for Wide Band Gap Logic Applications. ACS Publications. Collection. https://doi.org/10.1021/acsomega.7b01289