Three-Dimensional Hetero-Integration of Faceted GaN
on Si Pillars for Efficient Light Energy Conversion Devices
Version 2 2017-05-22, 17:05
Version 1 2017-05-22, 15:48
Posted on 2017-05-22 - 17:05
An
important pathway for cost-effective light energy conversion
devices, such as solar cells and light emitting diodes, is to integrate
III–V (e.g., GaN) materials
on Si substrates. Such integration first necessitates growth of high
crystalline III–V materials on Si, which has been the focus
of many studies. However, the integration also requires that the final
III–V/Si structure has a high light energy conversion efficiency.
To accomplish these twin goals, we use single-crystalline microsized
Si pillars as a seed layer to first grow faceted Si structures, which
are then used for the heteroepitaxial growth of faceted GaN films.
These faceted GaN films on Si have high crystallinity, and their threading
dislocation density is similar to that of GaN grown on sapphire. In
addition, the final faceted GaN/Si structure has great light absorption
and extraction characteristics, leading to improved performance for
GaN-on-Si light energy conversion devices.
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Kim, Dong Rip; Lee, Chi Hwan; Cho, In Sun; Jang, Hanmin; Jeon, Min Soo; Zheng, Xiaolin (2017). Three-Dimensional Hetero-Integration of Faceted GaN
on Si Pillars for Efficient Light Energy Conversion Devices. ACS Publications. Collection. https://doi.org/10.1021/acsnano.7b01967
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AUTHORS (6)
DK
Dong Rip Kim
CL
Chi Hwan Lee
IC
In Sun Cho
HJ
Hanmin Jang
MJ
Min Soo Jeon
XZ
Xiaolin Zheng
KEYWORDS
extraction characteristicslight absorptionSi Pillarsseed layerGaN-on-Si light energy conversion devicesFaceted GaNuse single-crystalline microsized Si pillarsSi substratesThree-Dimensional Hetero-IntegrationIIIlight energy conversion devicesfaceted GaN filmsEfficient Light Energy Conversion Devicesfaceted Si structuresheteroepitaxial growthSuch integrationlight energy conversion efficiencydislocation density