Submicrometer Resolution
Hyperspectral Quantum Rod
Thermal Imaging of Microelectronic Devices
Posted on 2020-01-14 - 22:44
The
trend of electronic device miniaturization, from
the microscale
to the nanoscale, presents a temperature measurement challenge. The
available techniques have limitations in terms of either resolution,
calibration, acquisition time, or equipment cost. Here we demonstrate
a thermography technique called hyperspectral quantum rod thermal
imaging (HQTI), which exploits temperature-dependent photoluminescence
(PL) emission of quantum rods to obtain the surface temperature map
of a biased electronic device, with a straightforward calibration.
This method uses relatively simple, low-cost equipment, while achieving
submicrometer spatial resolution. This technique is demonstrated by
measuring the thermal map of a direct current (dc) operated gallium
nitride (GaN) high electron mobility transistor (HEMT), achieving
a temperature precision of ∼4 °C and an ∼700–800
nm estimated lateral optical resolution. This is a versatile method
for measurement both in submicrometer scale regions of interest and
of larger areas in the hundreds of micrometers range.
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Öner, Bahar; Pomeroy, James W.; Kuball, Martin (2019). Submicrometer Resolution
Hyperspectral Quantum Rod
Thermal Imaging of Microelectronic Devices. ACS Publications. Collection. https://doi.org/10.1021/acsaelm.9b00575
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AUTHORS (3)
BO
Bahar Öner
JP
James W. Pomeroy
MK
Martin Kuball
KEYWORDS
temperature precisionequipment costMicroelectronic Devicessurface temperature maphyperspectral quantum rodelectron mobility transistorHQTItemperature measurement challengecalibrationmicrometers rangesubmicrometer scale regionsmethodPLacquisition timedevice miniaturizationSubmicrometer Resolution Hyperspectral Quantum Rodthermography techniqueHEMTgallium nitridequantum rodsexploits temperature-dependent photoluminescence