Selective
Synthesis of Bi2Te3/WS2 Heterostructures
with Strong Interlayer Coupling
Posted on 2020-06-19 - 12:35
The
vertical integration of atomically thin-layered materials to
create van der Waals heterostructures (vdWHs) has been proposed as
a method to design nanostructures with emergent properties. In this
work, epitaxial Bi2Te3/WS2 vdWHs
are synthesized via a two-step vapor deposition process. It is calculated
that the vdWH has an indirect band gap with a valence band edge that
bridges the vdW gap, resulting in a quenched photoluminescence (PL)
from the WS2 monolayer, reduced intensity of its resonance
Raman vibrational peaks, improved vertical charge transport, and a
decrease in the intensity of second harmonic generation (SHG). Furthermore,
it is observed that induced defects strongly influence the nucleation
and growth of vdWHs. By creating point defects in WS2 monolayers,
it is shown that the growth of Bi2Te3 platelets
can be patterned. This work offers important insights into the synthesis,
defect engineering, and moiré engineering of an emerging class
of two-dimensional (2D) heterostructures.
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Kahn, Ethan; Lucking, Michael; Zhang, Fu; Lei, Yu; Granzier-Nakajima, Tomotaroh; Grasseschi, Daniel; et al. (2020). Selective
Synthesis of Bi2Te3/WS2 Heterostructures
with Strong Interlayer Coupling. ACS Publications. Collection. https://doi.org/10.1021/acsami.0c03656
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AUTHORS (13)
EK
Ethan Kahn
ML
Michael Lucking
FZ
Fu Zhang
YL
Yu Lei
TG
Tomotaroh Granzier-Nakajima
DG
Daniel Grasseschi
KB
Kory Beach
WM
William Murray
YY
Yin-Ting Yeh
AE
Ana Laura Elias
ZL
Zhiwen Liu
HT
Humberto Terrones
MT
Mauricio Terrones
KEYWORDS
charge transportSHGintensityStrong Interlayerband gapvalence band edgeBi 2 Te 3 plateletsatomically thin-layered materialsPLvan der Waals heterostructuresvdWHpoint defectsdesign nanostructuresdefect engineeringresonance Raman vibrational peaksWS 2 monolayersquenched photoluminescenceWS 2 monolayervapor deposition processSelective SynthesisvdW gap