Proving Scalability of an Organic Semiconductor To
Print a TFT-Active Matrix Using a Roll-to-Roll Gravure
Posted on 2017-09-14 - 08:13
Organic
semiconductor-based thin-film transistors’ (TFTs)
charge-carrier mobility has been enhanced up to 25 cm2/V
s through the improvement of fabrication methods and greater understanding
of the microstructure charge-transport mechanism. To expand the practical
feasibility of organic semiconductor-based TFTs, their electrical
properties should be easily accessed from the fully printed devices
through a scalable printing method, such as a roll-to-roll (R2R) gravure.
In this study, four commercially available organic semiconductors
were separately formulated into gravure inks. They were then employed
in the R2R gravure system (silver ink for printing gate and drain–source
electrodes and BaTiO3 ink for printing dielectric layers)
for printing 20 × 20 TFT-active matrix with the resolution of
10 pixels per inch on poly(ethylene terephthalate) (PET) foils to
attain electrical properties of organic semiconductors a practical
printing method. Electrical characteristics (mobility, on–off
current ratio, threshold voltage, and transconductance) of the R2R
gravure-printed 20 × 20 TFT-active matrices fabricated with organic
semiconducting ink were analyzed statistically, and the results showed
more than 98% device yield and 50 % electrical variations in
the R2R gravure TFT-active matrices along the PET web.
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Sun, Junfeng; Park, Hyejin; Jung, Younsu; Rajbhandari, Grishmi; Maskey, Bijendra Bishow; Sapkota, Ashish; et al. (2017). Proving Scalability of an Organic Semiconductor To
Print a TFT-Active Matrix Using a Roll-to-Roll Gravure. ACS Publications. Collection. https://doi.org/10.1021/acsomega.7b00873
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AUTHORS (9)
JS
Junfeng Sun
HP
Hyejin Park
YJ
Younsu Jung
GR
Grishmi Rajbhandari
BM
Bijendra Bishow Maskey
AS
Ashish Sapkota
YA
Yasuo Azuma
YM
Yutaka Majima
GC
Gyoujin Cho
KEYWORDS
PET webR 2R gravure systemmicrostructure charge-transport mechanismBaTiO 3 inkcharge-carrier mobilityProving ScalabilityOrganic Semiconductorsilver inksemiconducting inkthreshold voltageElectrical characteristicsgravure inkssemiconductor-based TFTsfabrication methodsprinting dielectric layersprinting gate10 pixelsTFT-Active MatrixR 2R gravureprinting methoddeviceR 2R gravure TFT-active matricesscalable printing method