Low Dark Current and
High-Speed InP/InGaAs Uni-Traveling-Carrier Photodiode
Posted on 23.09.2022 - 07:03
High-speed and high-efficiency photodiodes are especially beneficial for exponential data communication traffic growth. However, improving high responsivity while maintaining low dark current and high bandwidth remains a challenge for vertical detector design. This study proposes a plasmonic InP/InGaAs uni-traveling-carrier photodiode with optical antenna arrays, which exhibits a low dark current of 2.52 nA at a −3 V bias voltage, a high bandwidth of over 40 GHz, and a high responsivity of 0.12 A/W. The absorption efficiency of the photodiode shows 2-fold improvement using plasmonic resonance generated by nanodisks at 1550 nm. This work designs a low dark current and high-bandwidth photodiode with improved responsivity, which provides a potential method for high-speed vertical photodiode design.
CITE THIS COLLECTION
Zhang, Bojian; Liu, Yingjian; Jiang, Kai; Wang, Fangli; Yang, Muyi; Guo, Songpo; et al. (2022): Plasmonic Resonance-Enhanced Low Dark Current and High-Speed InP/InGaAs Uni-Traveling-Carrier Photodiode. ACS Publications. Collection. https://doi.org/10.1021/acsaelm.2c01052
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vertical detector designoptical antenna arrayslow dark currentimproving high responsivityhigh bandwidth remainsphotodiode shows 2carrier photodiode highcarrier photodiodebandwidth photodiodehigh responsivityhigh bandwidthimproved responsivitywork designsstudy proposespotential methodplasmonic resonanceplasmonic inpingaas uniespecially beneficialefficiency photodiodesabsorption efficiency52 na40 ghz1550 nm