Photovoltage-Coupled Dual-Gate InGaZnO Thin-Film Transistors
Operated at the Subthreshold Region for Low-Power Photodetection
Posted on 2020-06-12 - 19:35
Photodetectors
with high sensitivity for weak light illumination
is highly desirable for large-area image sensors. Here, we introduce
a sensor pixel design that integrates a perovskite photodiode (PD)
with a dual-gate InGaZnO thin-film transistor (DG–TFT). In
our pixel configuration, the light intensity-dependent photovoltage
of the perovskite PD directly adjusts the gate field of the DG–TFT,
then the optical signal is converted into a photovoltage signal and
gets amplified at the subthreshold region of the DG–TFT. Spin-coated
perovskite PD exhibits an open-circuit voltage (Voc) ∼3 times higher than that of the commercial
silicon PD under weak light illumination. The capability of detecting
weak light with low power consumption is enabled by the coupling of
the photovoltage of a perovskite PD to the DG–TFT operated
at the subthreshold region. The photovoltage-coupled DG–TFT
achieves a light-to-dark current ratio of 26 under 5 μW/cm2 with an operation power as low as 27 pW. The theoretical
noise equivalent power of such pixels is estimated to be in the sub-picowatt
per square centimeter range. The integrated photovoltage-coupled DG–TFT
provides a strategy for developing sensitive and low-power image sensors.
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Xiang, Ben; Zou, Taoyu; Wang, Ya; Liu, Chuan; Chen, Jun; Wang, Kai; et al. (2020). Photovoltage-Coupled Dual-Gate InGaZnO Thin-Film Transistors
Operated at the Subthreshold Region for Low-Power Photodetection. ACS Publications. Collection. https://doi.org/10.1021/acsaelm.0c00308
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AUTHORS (9)
BX
Ben Xiang
TZ
Taoyu Zou
YW
Ya Wang
CL
Chuan Liu
JC
Jun Chen
KW
Kai Wang
QD
Qing Dai
SZ
Shengdong Zhang
HZ
Hang Zhou
KEYWORDS
light illuminationsensor pixel designLow-Power Photodetection Photodetectorsnoise equivalent powerperovskite PDsquare centimeter rangelight intensity-dependent photovoltageimage sensorsdual-gate InGaZnO thin-film transistorDGsubthreshold regionPhotovoltage-Coupled Dual-Gate InGaZnO Thin-Film Transistors Operated