Macroscopic
Versus Microscopic Schottky Barrier Determination
at (Au/Pt)/Ge(100): Interfacial Local Modulation
Posted on 2020-06-15 - 09:43
Macroscopic
current–voltage measurements and nanoscopic
ballistic electron emission spectroscopy (BEES) have been used to
probe the Schottky barrier height (SBH) at metal/Ge(100) junctions
for two metal electrodes (Au and Pt) and different metallization methods,
specifically, thermal-vapor and laser-vapor deposition. Analysis of
macroscopic current–voltage characteristics indicates that
a SBH of 0.61–0.63 eV controls rectification at room temperature.
On the other hand, BEES measured at 80 K reveals the coexistence of
two distinct barriers at the nanoscale, taking values in the ranges
0.61–0.64 and 0.70–0.74 eV for the cases studied. For
each metal–semiconductor junction, the macroscopic measurement
agrees well with the lower barrier found with BEES. Ab initio modeling
of BEES spectra ascribes the two barriers to two different atomic
registries between the metals and the Ge(100) surface, a significant
relevant insight for next-generation highly miniaturized Ge-based
devices.
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Gerbi, Andrea; Buzio, Renato; González, Cesar; Manca, Nicola; Marrè, Daniele; Marras, Sergio; et al. (2020). Macroscopic
Versus Microscopic Schottky Barrier Determination
at (Au/Pt)/Ge(100): Interfacial Local Modulation. ACS Publications. Collection. https://doi.org/10.1021/acsami.0c07252
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AUTHORS (11)
AG
Andrea Gerbi
RB
Renato Buzio
CG
Cesar González
NM
Nicola Manca
DM
Daniele Marrè
SM
Sergio Marras
MP
Mirko Prato
LB
Lloyd Bell
SD
Sergio Di Matteo
FF
Fernando Flores
Pd
Pedro L. de Andres