Interstitial Oxide Ion Conductivity in the Langasite
Structure: Carrier Trapping by Formation of (Ga,Ge)2O8 Units in La3Ga5–xGe1+xO14+x/2 (0 < x ≤ 1.5)
Posted on 2019-07-25 - 19:52
Framework
oxides with the capacity to host mobile interstitial
oxide anions are of interest as electrolytes in intermediate temperature
solid oxide fuel cells (SOFCs). High performance materials of this
type are currently limited to the anisotropic oxyapatite and melilite
structure types. The langasite structure is based on a corner-shared
tetrahedral network similar to that in melilite but is three-dimensionally
connected by additional octahedral sites that bridge the layers by
corner sharing. Using low-temperature synthesis, we introduce interstitial
oxide charge carriers into the La3Ga5–xGe1+xO14+x/2 langasites, attaining a higher defect content
than reported in the lower dimensional oxyapatite and melilite systems
in La3Ga3.5Ge2.5O14.75 (x = 1.5). Neutron diffraction and multinuclear
solid state 17O and 71Ga NMR, supported by DFT
calculations, show that the excess oxygen is accommodated by the formation
of a (Ge,Ga)2O8 structural unit, formed from
a pair of edge-sharing five-coordinated Ga/Ge square-based pyramidal
sites bridged by the interstitial oxide and a strongly displaced framework
oxide. This leads to more substantial local deformations of the structure
than observed in the interstitial-doped melilite, enabled by the octahedral
site whose primary coordination environment is little changed by formation
of the pair of square-based pyramids from the originally tetrahedral
sites. AC impedance spectroscopy on spark plasma sintered pellets
showed that, despite its higher interstitial oxide content, the ionic
conductivity of the La3Ga5–xGe1+xO14+x/2 langasite family is lower than that of the corresponding
melilites La1+ySr1–yGa3O7+y/2.
The cooperative structural relaxation that forms the interstitial-based
(Ga,Ge)2O8 units stabilizes higher defect concentrations
than the single-site GaO5 trigonal bipyramids found in
melilite but effectively traps the charge carriers. This highlights
the importance of controlling local structural relaxation in the design
of new framework electrolytes and suggests that the propensity of
a framework to form extended units around defects will influence its
ability to generate high mobility interstitial carriers.
CITE THIS COLLECTION
DataCiteDataCite
3 Biotech3 Biotech
3D Printing in Medicine3D Printing in Medicine
3D Research3D Research
3D-Printed Materials and Systems3D-Printed Materials and Systems
4OR4OR
AAPG BulletinAAPG Bulletin
AAPS OpenAAPS Open
AAPS PharmSciTechAAPS PharmSciTech
Abhandlungen aus dem Mathematischen Seminar der Universität HamburgAbhandlungen aus dem Mathematischen Seminar der Universität Hamburg
ABI Technik (German)ABI Technik (German)
Academic MedicineAcademic Medicine
Academic PediatricsAcademic Pediatrics
Academic PsychiatryAcademic Psychiatry
Academic QuestionsAcademic Questions
Academy of Management DiscoveriesAcademy of Management Discoveries
Academy of Management JournalAcademy of Management Journal
Academy of Management Learning and EducationAcademy of Management Learning and Education
Academy of Management PerspectivesAcademy of Management Perspectives
Academy of Management ProceedingsAcademy of Management Proceedings
Academy of Management ReviewAcademy of Management Review
Diaz-Lopez, Maria; Shin, J. Felix; Li, Ming; Dyer, Matthew S.; Pitcher, Michael J.; Claridge, John B.; et al. (2019). Interstitial Oxide Ion Conductivity in the Langasite
Structure: Carrier Trapping by Formation of (Ga,Ge)2O8 Units in La3Ga5–xGe1+xO14+x/2 (0 < x ≤ 1.5). ACS Publications. Collection. https://doi.org/10.1021/acs.chemmater.9b01734