Increasing Trapped Carrier Density in Nanoscale GeSeAs
Films by As Ion Implantation for Selector Devices in 3D-Stacking Memory
Version 2 2019-08-23, 13:43
Version 1 2019-08-23, 13:38
Posted on 2019-08-23 - 13:43
An ovonic threshold
switching (OTS) selector based on threshold
switch effect is considered as a promising switching device for 3D-stacking
memory. In this work, we put forward a safe and controllable method
to prepare a high-performance nanoscale GeSeAs chalcogenide film by
implanting As ions into sputtered GeSe. Resistance–temperature
measurement manifests that the structure of GeSeAs maintains amorphous
phase even at high temperature, indicating that no phase transition
occurs for this selector material. Raman scattering spectroscopy indicates
that the inner structure becomes more disordered after As implantation
due to the change of local structure motifs. In addition, it was demonstrated
that the GeSeAs-based device with 5.0 × 1015/cm2 As dose has a low threshold voltage (Vth) of 2.5 V and a high on-state current of 10 mA. The As ions
can act as donors and provide more carriers originating from the nonbonding
electrons in the As-centered local structures, accounting for the
low threshold voltage of the GeSeAs-based selector device.
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Liu, Guangyu; Li, Tao; Wu, Liangcai; Chen, Ying; Liu, Bo; Ma, Zhongyuan; et al. (2019). Increasing Trapped Carrier Density in Nanoscale GeSeAs
Films by As Ion Implantation for Selector Devices in 3D-Stacking Memory. ACS Publications. Collection. https://doi.org/10.1021/acsanm.9b00734
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AUTHORS (8)
GL
Guangyu Liu
TL
Tao Li
LW
Liangcai Wu
YC
Ying Chen
BL
Bo Liu
ZM
Zhongyuan Ma
SS
Sannian Song
ZS
Zhitang Song