High Polaron Yield
p‑Doping with an Ammoniumyl
Radical Cation Oxidant for Organic Thin-Film Transistors
Posted on 2024-05-07 - 01:03
Doping is a crucial strategy for
effectively modulating
the charge
transport properties of organic semiconductors and thus the performance
of the resulting organic optoelectronic devices. In this study, we
report an ammoniumyl radical cation oxidant, tris(4-bromophenyl)ammoniumyl
hexachloroantimonate (magic blue, MB), for tuning the performance
of diketopyrrolopyrrole polymer (TDPP-Se)-based organic thin-film
transistors (OTFTs). In comparison to the classical dopant 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane
(F4TCNQ), MB oxidizes TDPP-Se into nonradical bipolarons at a higher
polaron yield of ∼100% and lower energy levels to trap unwanted
minority carriers. As a result, the MB-doped system overcomes the
leveling up of off-current prevalently observed in doped OTFTs. In
addition, MB is compatible with the host semiconductor and enhances
the crystallization of the polymer, facilitating the formation of
ordered films with a reduced trap density. Following optimization
of the doping ratio, bar-coated OTFTs achieve a maximum mobility of
7.59 cm2 V–1 s–1, with
the threshold voltage reduced to −2 V and without sacrificing
the on/off ratio. These results demonstrate the potential of the strong
radical oxidant for high polaron yield p-doping in organic optoelectronic
devices.
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Liu, Yuqian; Dong, Weijia; Wang, Zhongli; Xu, Chenhui; Wang, ShiYu; Xu, Yi; et al. (1753). High Polaron Yield
p‑Doping with an Ammoniumyl
Radical Cation Oxidant for Organic Thin-Film Transistors. ACS Publications. Collection. https://doi.org/10.1021/acsaelm.4c00407