High Efficiency Si Photocathode Protected by Multifunctional
GaN Nanostructures
Version 2 2018-09-20, 19:48
Version 1 2018-09-20, 19:44
Posted on 2018-09-20 - 19:48
Photoelectrochemical water splitting
is a clean and environmentally
friendly method for solar hydrogen generation. Its practical application,
however, has been limited by the poor stability of semiconductor photoelectrodes.
In this work, we demonstrate the use of GaN nanostructures as a multifunctional
protection layer for an otherwise unstable, low-performance photocathode.
The direct integration of GaN nanostructures on n+–p
Si wafer not only protects Si surface from corrosion but also significantly
reduces the charge carrier transfer resistance at the semiconductor/liquid
junction, leading to long-term stability (>100 h) at a large current
density (>35 mA/cm2) under 1 sun illumination. The measured
applied bias photon-to-current efficiency of 10.5% is among the highest
values ever reported for a Si photocathode. Given that both Si and
GaN are already widely produced in industry, our studies offer a viable
path for achieving high-efficiency and highly stable semiconductor
photoelectrodes for solar water splitting with proven manufacturability
and scalability.
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Vanka, Srinivas; Arca, Elisabetta; Cheng, Shaobo; Sun, Kai; Botton, Gianluigi A.; Teeter, Glenn; et al. (2018). High Efficiency Si Photocathode Protected by Multifunctional
GaN Nanostructures. ACS Publications. Collection. https://doi.org/10.1021/acs.nanolett.8b03087
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AUTHORS (7)
SV
Srinivas Vanka
EA
Elisabetta Arca
SC
Shaobo Cheng
KS
Kai Sun
GB
Gianluigi A. Botton
GT
Glenn Teeter
ZM
Zetian Mi