Ferroelectric
Second-Order Memristor
Posted on 2019-08-23 - 22:13
While
the conductance of a first-order memristor is defined entirely
by the external stimuli, in the second-order memristor it is governed
by the both the external stimuli and its instant internal state. As
a result, the dynamics of such devices allows to naturally emulate
the temporal behavior of biological synapses, which encodes the spike
timing information in synaptic weights. Here, we demonstrate a new
type of second-order memristor functionality in the ferroelectric
HfO2-based tunnel junction on silicon. The continuous change
of conductance in the p+-Si/Hf0.5Zr0.5O2/TiN tunnel junction is achieved via the gradual switching
of polarization in ferroelectric domains of polycrystalline Hf0.5Zr0.5O2 layer, whereas the combined
dynamics of the built-in electric field and charge trapping/detrapping
at the defect states at the bottom Si interface defines the temporal
behavior of the memristor device, similar to synapses in biological
systems. The implemented ferroelectric second-order memristor exhibits
various synaptic functionalities, such as paired-pulse potentiation/depression
and spike-rate-dependent plasticity, and can serve as a building block
for the development of neuromorphic computing architectures.
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Mikheev, Vitalii; Chouprik, Anastasia; Lebedinskii, Yury; Zarubin, Sergei; Matveyev, Yury; Kondratyuk, Ekaterina; et al. (2019). Ferroelectric
Second-Order Memristor. ACS Publications. Collection. https://doi.org/10.1021/acsami.9b08189
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AUTHORS (10)
VM
Vitalii Mikheev
AC
Anastasia Chouprik
YL
Yury Lebedinskii
SZ
Sergei Zarubin
YM
Yury Matveyev
EK
Ekaterina Kondratyuk
MK
Maxim G. Kozodaev
AM
Andrey M. Markeev
AZ
Andrei Zenkevich
DN
Dmitrii Negrov
KEYWORDS
Ferroelectric Second-Order Memristordynamicconductancesynapsesbottom Si interfacetunnel junctionmemristor exhibitsbuilding blockmemristor functionalitysynaptic functionalitiessynaptic weightsHfO 2Hf 0.5 Zr 0.5 O 2 layerspike-rate-dependent plasticityspike timing informationstimulimemristor devicedefect states