Epitaxial Growth of β‑Ga2O3 Thin Films on Si with YSZ Buffer Layer

Posted on 24.11.2022 - 15:05
We report the epitaxial growth of (2̅01)-oriented β-Ga2O3 thin films on a (001) Si substrate using the pulsed laser deposition technique employing epitaxial yttria-stabilized zirconia (YSZ) buffer layers. Epitaxial β-Ga2O3 thin films possess a biaxial compressive strain on YSZ single-crystal substrates while they exhibit a biaxial tensile strain on YSZ-buffered Si substrates. Post-annealing improves the crystalline quality of β-Ga2O3 thin films. High-resolution X-ray diffraction analyses reveal that the epitaxial (2̅01) β-Ga2O3 thin films on Si have eight in-plane domain variants to accommodate the large difference in the crystal structure between monoclinic β-Ga2O3 and cubic YSZ. The results provide a pathway to integrate epitaxial β-Ga2O3 thin films on a Si gold standard substrate, which will expand the application scope beyond high-power electronics.

CITE THIS COLLECTION

Choi, Hyung-Jin; Lee, Jun Young; Jung, Soo Young; Ning, Ruiguang; Kim, Min-Seok; Jung, Sung-Jin; et al. (2022): Epitaxial Growth of β‑Ga2O3 Thin Films on Si with YSZ Buffer Layer. ACS Publications. Collection. https://doi.org/10.1021/acsomega.2c04387
or
Select your citation style and then place your mouse over the citation text to select it.

SHARE

email
need help?