Effect of Infrared Pulse Excitation on the Bound Charge-Transfer
State of Photovoltaic Interfaces
Version 2 2017-09-25, 13:24
Version 1 2017-09-25, 13:19
Posted on 2017-09-25 - 13:24
The
nature and dynamics of the bound charge-transfer (CT) state
in the exciton dissociation process in organic solar cells are of
critical importance for the understanding of these devices. It was
recently demonstrated that this state can be probed by a new experiment
in which an infrared (IR) push-pulse is used to dissociate charges
from the bound excited state. Here we proposed a simple quantum dynamics
model to simulate the excitation of the IR pulse on the bound CT state
with model parameters extracted from quantum chemical calculations.
We show that the pulse dissociates the CT state following two different
mechanisms: one, fairly expected, is the direct excitation
of higher energy CT states leading to charge separation; the other,
proposed here for the first time, is a rebound mechanism in which the negative charge is transferred in the opposite direction
to form the neutral Frenkel exciton state from where it dissociates.
CITE THIS COLLECTION
DataCite
3 Biotech
3D Printing in Medicine
3D Research
3D-Printed Materials and Systems
4OR
AAPG Bulletin
AAPS Open
AAPS PharmSciTech
Abhandlungen aus dem Mathematischen Seminar der Universität Hamburg
ABI Technik (German)
Academic Medicine
Academic Pediatrics
Academic Psychiatry
Academic Questions
Academy of Management Discoveries
Academy of Management Journal
Academy of Management Learning and Education
Academy of Management Perspectives
Academy of Management Proceedings
Academy of Management Review
Geng, Yun; Lee, Myeong H.; Troisi, Alessandro (2017). Effect of Infrared Pulse Excitation on the Bound Charge-Transfer
State of Photovoltaic Interfaces. ACS Publications. Collection. https://doi.org/10.1021/acs.jpclett.7b02088
or
Select your citation style and then place your mouse over the citation text to select it.
SHARE
Usage metrics
Read the peer-reviewed publication
AUTHORS (3)
YG
Yun Geng
ML
Myeong H. Lee
AT
Alessandro Troisi