Current-Induced Spin Polarization in Topological Insulator–Graphene
Heterostructures
Version 2 2016-04-07, 15:02Version 2 2016-04-07, 15:02
Version 1 2016-03-22, 19:33Version 1 2016-03-22, 19:33
Posted on 2016-03-16 - 00:00
Further development of the field
of all-electric spintronics requires the successful integration of
spin transport channels with spin injector/generator elements. While
with the advent of graphene and related 2D materials high performance
spin channel materials are available, the use of nanostructured spin
generators remains a major challenge. Especially promising for the
latter purpose are 3D topological insulators, whose 2D surface states
host massless Dirac Fermions with spin-momentum locking. Here, we
demonstrate injection of spin-polarized current from a topological
insulator into graphene, enabled by its intimate coupling to an ultrathin
Bi2Te2Se nanoplatelet within a van der Waals
epitaxial heterostructure. The spin switching signal, whose magnitude
scales inversely with temperature, is detectable up to ∼15
K. Our findings establish topological insulators as prospective future
components of spintronic devices wherein spin manipulation is achieved
by purely electrical means.
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Vaklinova, Kristina; Hoyer, Alexander; Burghard, Marko; Kern, Klaus (2016). Current-Induced Spin Polarization in Topological Insulator–Graphene
Heterostructures. ACS Publications. Collection. https://doi.org/10.1021/acs.nanolett.6b00167