Characterizing the Blocking Electron Ability of the
Schottky Junction in SnO2–SDC Semiconductor–Ionic
Membrane Fuel Cells
Posted on 2020-07-08 - 17:13
Recent research has
shown that fuel cells using semiconductor–ionic
conductor material (SIM) as electrolytes can achieve good performance
due to the enhancement of ionic conductivity, and the Schottky junction
is expected to block the electron conduction to further address the
shorting circuit issue, but efficient characterization of the blocking
electron ability of the Schottky junction is absent. In this work,
SnO2-Ce0.8Sm0.2O2−δ(SDC) SIM was applied as an electrolyte membrane to assemble the
semiconductor–ionic membrane fuel cell (SIMFC). Although the
SnO2-SDC SIM electrolyte possessed certain electron conduction,
such a device can also deliver an open circuit voltage above 1 V,
and the maximum output power reached 1059 W cm–2 at 550 °C without a shorting circuit problem. The rectifying
curve was recorded under an inset gas atmosphere to evaluate the blocking
electron ability of the Schottky junction. The UPS and UV–vis
characterization revealed that the band energy alignment of the Schottky
junction is the underlying reason for eliminating electron conduction
in SIMFC, and the blocking electron capability is related to the barrier
energy of the Schottky junction, which is determined by the difference
between the work function of the metal and the Fermi level of the
semiconductor. The characterization of band energy and rectifying
curve provides a common methodology for SIMFC.
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Liu, Kai; Ganesh, K. Sivajee; Nie, Jingjing; He, Zili; Xia, Chen; Dong, Wenjing; et al. (2020). Characterizing the Blocking Electron Ability of the
Schottky Junction in SnO2–SDC Semiconductor–Ionic
Membrane Fuel Cells. ACS Publications. Collection. https://doi.org/10.1021/acssuschemeng.0c01344