Blueshift Enhanced
Giant Lateral Photovoltaic Effect
Observed in MoS2 Granular Film (Quantum Dots)/Porous Silicon/p-Si
Posted on 2024-10-31 - 08:14
The lateral photovoltaic effect (LPE) has garnered significant
attention due to its extensive applications in fields such as position-sensitive
detectors, artificial intelligence, imaging, automatic driving, and
so on. Enhancing LPE sensitivity has long been a focal point for researchers,
with recent years showing advancements but still leaving room for
improvement. In this study, we achieved sensitivities of up to 1195.02
mV/mm for MoS2 granular film (MoS2-GF)/porous
silicon (PS)/p-Si and 951.71 mV/mm for MoS2-QDs/PS/p-Si
structures under 520 nm laser irradiation. The results demonstrate
sensitivities 1 to 3 orders of magnitude higher than those of traditional
LPE devices and surpass the majority of previously reported position-sensitive
detectors. Leveraging the enhanced light absorption in PS, we observed
a blueshift due to multiple excitonic transitions induced by the quantum
confinement effects of MoS2 granular films and quantum
dots, assisting the light response of LPE. By forming heterojunctions
and serving as carrier mediators, they effectively suppress carrier
recombination of photogenerated carriers and holes on the PS surface,
thereby enhancing utilization efficiency. Furthermore, they extend
the short carrier migration length caused by the irregular surface
of PS, promoting lateral diffusion of photogenerated carriers and
generating significant lateral concentration gradients. The advancements
present novel pathways for ultrawideband and ultrasensitive optoelectronic
and position-sensitive detectors, underscoring their vast potential
in diverse optoelectronic applications.
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