Atomic Layer Deposition of Nickel Using a Heteroleptic
Ni Precursor with NH3 and Selective Deposition on Defects
of Graphene
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Version 1 2019-06-25, 18:37Version 1 2019-06-25, 18:37
Posted on 2019-06-26 - 14:13
Atomic
layer deposition (ALD) of Ni was demonstrated by introducing
a novel oxygen-free heteroleptic Ni precursor, (η3-cyclohexenyl)(η5-cyclopentadienyl)nickel(II) [Ni(Chex)(Cp)].
For this process, non-oxygen-containing reactants (NH3 and
H2 molecules) were used within a deposition temperature
range of 320–340 °C. Typical ALD growth behavior was confirmed
at 340 °C with a self-limiting growth rate of 1.1 Å/cycle.
Furthermore, a postannealing process was carried out in a H2 ambient environment to improve the quality of the as-deposited Ni
film. As a result, a high-quality Ni film with a substantially low
resistivity (44.9 μΩcm) was obtained, owing to the high
purity and excellent crystallinity. Finally, this Ni ALD process was
also performed on a graphene surface. Selective deposition of Ni on
defects of graphene was confirmed by transmission electron microscopy
and atomic force microscopy analyses with a low growth rate (∼0.27
Å/cycle). This unique method can be further used to fabricate
two-dimensional functional materials for several potential applications.
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Kim, Minsu; Nabeya, Shunichi; Nandi, Dip K.; Suzuki, Kazuharu; Kim, Hyun-Mi; Cho, Seong-Yong; et al. (2019). Atomic Layer Deposition of Nickel Using a Heteroleptic
Ni Precursor with NH3 and Selective Deposition on Defects
of Graphene. ACS Publications. Collection. https://doi.org/10.1021/acsomega.9b01003