Advanced Room Temperature Single-Electron Transistor
of a Germanium Nanochain with Two and Multitunnel Junctions
Posted on 2020-06-18 - 15:33
The
single-electron transistor (SET) has tremendous importance
in the microelectronic industry on account of low-power consumption,
an ultrasmall size, and a large integration prospect. The key challenge
is to resolve the fabrication issues of a SET to realize a mechanically
steady device with reproducible and controllable transport characteristics
that operate at room temperature. Herein, we report on the realization
of robust and well-controlled SET devices with at least two junctions
and multijunctions using an advanced nanochain (NC) architecture of
germanium nanoparticles rooted by a germanium oxide ropeway. These
two-junction and multitunneling-junction (MTJ) SET devices exhibit
an ideal Coulomb staircase behavior of single-electron charge transfer
at room temperature and obeyed the theoretical path of increasing
threshold voltage with the number of tunnel junctions. This Coulomb
transistor prospects magnificent rewards of room-temperature operation,
periodic Coulomb oscillations, well-controlled threshold voltage and
large on/off ratios and have the potential to modernize the random
access memory and digital data storage technologies.
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Katkar, Amar S.; Gupta, Shobhnath P.; Granata, Carmine; Nappi, Ciro; Prellier, Wilfrid; Chen, Lih-Juann; et al. (2020). Advanced Room Temperature Single-Electron Transistor
of a Germanium Nanochain with Two and Multitunnel Junctions. ACS Publications. Collection. https://doi.org/10.1021/acsaelm.0c00242
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AUTHORS (7)
AK
Amar S. Katkar
SG
Shobhnath P. Gupta
CG
Carmine Granata
CN
Ciro Nappi
WP
Wilfrid Prellier
LC
Lih-Juann Chen
PW
Pravin S. Walke