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In Situ Investigation of Defect-Free Copper Nanowire Growth

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posted on 2018-01-25, 00:00 authored by Ting-Yi Lin, Yong-Long Chen, Chia-Fu Chang, Guan-Min Huang, Chun-Wei Huang, Cheng-Yu Hsieh, Yu-Chieh Lo, Kuo-Chang Lu, Wen-Wei Wu, Lih-Juann Chen
The fabrication and placement of high purity nanometals, such as one-dimensional copper (Cu) nanowires, for interconnection in integrated devices have been among the most important technological developments in recent years. Structural stability and oxidation prevention have been the key issues, and the defect control in Cu nanowire growth has been found to be important. Here, we report the synthesis of defect-free single-crystalline Cu nanowires by controlling the surface-assisted heterogeneous nucleation of Cu atomic layering on the graphite-like loop of an amorphous carbon (a-C) lacey film surface. Without a metal-catalyst or induced defects, the high quality Cu nanowires formed with high aspect ratio and high growth rate of 578 nm/s. The dynamic study of the growth of heterogeneous nanowires was conducted in situ with a high-resolution transmission electron microscope. The study illuminates the new mechanism by heterogeneous nucleation control and laying the groundwork for better understanding of heterosurface-assisted nucleation of defect-free Cu nanowire on a-C lacey film.

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