posted on 2024-09-16, 14:38authored byDan Sun, Xianqi Song, Linlin Liu, Chennan Song, Hanyu Liu, Quan Li, Keith Butler, Congwei Xie, Zhuhua Zhang, Yu Xie
The
chemical vapor deposition (CVD) method holds promise for the
scalable and controlled synthesis of high-quality borophene. However,
the current lack of an atomistic understanding of intricate kinetic
pathways from precursors to borophene impedes process optimization.
Here, we employ first-principles simulations to systematically explore
the pyrolytic decomposition pathways of the most used precursor diborane
(B<sub>2</sub>H<sub>6</sub>) to borophene on various transition metal
surfaces. Our results reveal that B<sub>2</sub>H<sub>6</sub> on various
metal substrates exhibits different dissociation behaviors. Meanwhile,
the activity of the examined metal substrates is quite anisotropic
and surface direction-dependent, where the estimated overall catalytic
activity order of these metals is found to be Pd ≈ Pt ≈
Rh > Ir ≈ Ru ≈ Cu > Au ≈ Ag. Our study
provides
atomistic insights into the dissociation kinetics of diborane precursors
on various transition metal surfaces, serving as a guide for experimental
growth of borophene.