American Chemical Society
nl5b04309_si_003.avi (5.94 MB)

Nickel/Platinum Dual Silicide Axial Nanowire Heterostructures with Excellent Photosensor Applications

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posted on 2016-02-04, 16:37 authored by Yen-Ting Wu, Chun-Wei Huang, Chung-Hua Chiu, Chia-Fu Chang, Jui-Yuan Chen, Ting-Yi Lin, Yu-Ting Huang, Kuo-Chang Lu, Ping-Hung Yeh, Wen-Wei Wu
Transition metal silicide nanowires (NWs) have attracted increasing attention as they possess advantages of both silicon NWs and transition metals. Over the past years, there have been reported with efforts on one silicide in a single silicon NW. However, the research on multicomponent silicides in a single silicon NW is still rare, leading to limited functionalities. In this work, we successfully fabricated β-Pt2Si/Si/θ-Ni2Si, β-Pt2Si/θ-Ni2Si, and Pt, Ni, and Si ternary phase axial NW heterostructures through solid state reactions at 650 °C. Using in situ transmission electron microscope (in situ TEM), the growth mechanism of silicide NW heterostructures and the diffusion behaviors of transition metals were systematically studied. Spherical aberration corrected scanning transmission electron microscope (Cs-corrected STEM) equipped with energy dispersive spectroscopy (EDS) was used to analyze the phase structure and composition of silicide NW heterostructures. Moreover, electrical and photon sensing properties for the silicide nanowire heterostructures demonstrated promising applications in nano-optoeletronic devices. We found that Ni, Pt, and Si ternary phase nanowire heterostructures have an excellent infrared light sensing property which is absent in bulk Ni2Si or Pt2Si. The above results would benefit the further understanding of heterostructured nano materials.