posted on 2021-11-22, 11:14authored byElisa Palacios-Lidón, Jaime Colchero, Miguel Ortuno, Eduardo Colom, Ana M. Benito, Wolfgang K. Maser, Andrés M. Somoza
Graphene oxide (GO)
is widely used as a component in thin film
optoelectronic device structures for practical reasons because its
electronic and optical properties can be controlled. Progress critically
depends on elucidating the nanoscale electronic structure of GO. However,
direct experimental access is challenging because of its disordered
and nonconductive character. Here, we quantitatively mapped the nanoscopic
charge distribution and charge dynamics of an individual GO sheet
by using Kelvin probe force microscopy (KPFM). Charge domains are
identified, presenting important charge interactions below distances
of 20 nm. Charge dynamics with very long relaxation times of at least
several hours and a logarithmic decay of the time correlation function
are in excellent agreement with Monte Carlo simulations, revealing
an universal hopping transport mechanism best described by Efros–Shklovskii’s
law.