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Cu Nanowires Passivated with Hexagonal Boron Nitride: An Ultrastable, Selectively Transparent Conductor

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posted on 12.06.2020 by Guozhen Liu, Jun Wang, Yahao Ge, Yuejin Wang, Shiqiang Lu, Yang Zhao, Yan Tang, Abdul Majid Soomro, Qiming Hong, Xiaodong Yang, Fuchun Xu, Sensen Li, Lu-Jian Chen, Duanjun Cai, Junyong Kang
The copper nanowire (Cu NW) network is considered a promising alternative to indium tin oxide as transparent conductors for advanced optoelectronic devices. However, the fast degradation of copper in ambient conditions largely overshadows its practical applications. Here we demonstrate a facile method for epitaxial growth of hexagonal boron nitride (h-BN) of a few atomic layers on interlaced Cu NWs by low-pressure chemical vapor deposition, which exhibit excellent thermal and chemical stability under high temperature (900 °C in vacuum), high humidity (95% RH), and strong base/oxidizer solution (NaOH/H2O2). Meanwhile, their optical and electrical performances remain similar to those of the original Cu NWs (e.g., high optical transmittance (∼93%) and high conductivity (60.9 Ω/□)). A smart privacy glass is successfully fabricated based on a Cu@h-BN NW network and liquid crytal, which could rapidly control the visibility from transparent to opaque (0.26 s) and, at the same time, strongly block the mid-infrared light for energy saving by screening radiative heat. This precise engineering of epitaxial Cu@h-BN core–shell nanostructure offers broad applications in high-performance electronic and optoelectronic devices.

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