Cu Nanowires Passivated with Hexagonal Boron Nitride: An Ultrastable, Selectively Transparent Conductor
mediaposted on 12.06.2020 by Guozhen Liu, Jun Wang, Yahao Ge, Yuejin Wang, Shiqiang Lu, Yang Zhao, Yan Tang, Abdul Majid Soomro, Qiming Hong, Xiaodong Yang, Fuchun Xu, Sensen Li, Lu-Jian Chen, Duanjun Cai, Junyong Kang
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The copper nanowire (Cu NW) network is considered a promising alternative to indium tin oxide as transparent conductors for advanced optoelectronic devices. However, the fast degradation of copper in ambient conditions largely overshadows its practical applications. Here we demonstrate a facile method for epitaxial growth of hexagonal boron nitride (h-BN) of a few atomic layers on interlaced Cu NWs by low-pressure chemical vapor deposition, which exhibit excellent thermal and chemical stability under high temperature (900 °C in vacuum), high humidity (95% RH), and strong base/oxidizer solution (NaOH/H2O2). Meanwhile, their optical and electrical performances remain similar to those of the original Cu NWs (e.g., high optical transmittance (∼93%) and high conductivity (60.9 Ω/□)). A smart privacy glass is successfully fabricated based on a Cu@h-BN NW network and liquid crytal, which could rapidly control the visibility from transparent to opaque (0.26 s) and, at the same time, strongly block the mid-infrared light for energy saving by screening radiative heat. This precise engineering of epitaxial Cu@h-BN core–shell nanostructure offers broad applications in high-performance electronic and optoelectronic devices.