posted on 2021-03-15, 21:34authored byJin Xiang, Mincheng Panmai, Shuwen Bai, Yuhao Ren, Guang-Can Li, Shulei Li, Jin Liu, Juntao Li, Miaoxuan Zeng, Juncong She, Yi Xu, Sheng Lan
Silicon
(Si) is generally considered as a poor photon emitter,
and various scenarios have been proposed to improve the photon emission
efficiency of Si. Here, we report the observation of a burst of the
hot electron luminescence from Si nanoparticles with diameters of
150–250 nm, which is triggered by the exponential increase
of the carrier density at high temperatures. We show that the stable
white light emission above the threshold can be realized by resonantly
exciting either the mirror-image-induced magnetic dipole resonance
of a Si nanoparticle placed on a thin silver film or the surface lattice
resonance of a regular array of Si nanopillars with femtosecond laser
pulses of only a few picojoules, where significant enhancements in
two- and three-photon-induced absorption can be achieved. Our findings
indicate the possibility of realizing all-Si-based nanolasers with
manipulated emission wavelength, which can be easily incorporated
into future integrated optical circuits.