Correlating Structure and Detection Properties in HgTe Nanocrystal Films
mediaposted on 06.05.2021, 18:33 by Sang-Soo Chee, Charlie Gréboval, Debora Vale Magalhaes, Julien Ramade, Audrey Chu, Junling Qu, Prachi Rastogi, Adrien Khalili, Tung Huu Dang, Corentin Dabard, Yoann Prado, Gilles Patriarche, Julien Chaste, Michael Rosticher, Sara Bals, Christophe Delerue, Emmanuel Lhuillier
HgTe nanocrystals (NCs) enable broadly tunable infrared absorption, now commonly used to design light sensors. This material tends to grow under multipodic shapes and does not present well-defined size distributions. Such point generates traps and reduces the particle packing, leading to a reduced mobility. It is thus highly desirable to comprehensively explore the effect of the shape on their performance. Here, we show, using a combination of electron tomography and tight binding simulations, that the charge dissociation is strong within HgTe NCs, but poorly shape dependent. Then, we design a dual-gate field-effect-transistor made of tripod HgTe NCs and use it to generate a planar p–n junction, offering more tunability than its vertical geometry counterpart. Interestingly, the performance of the tripods is higher than sphere ones, and this can be correlated with a stronger Te excess in the case of sphere shapes which is responsible for a higher hole trap density.
Read the peer-reviewed publication
Detection Propertiescharge dissociationdesign light sensorsdual-gate field-effect-transistorbinding simulationsmultipodic shapessphere onesgeometry counterpartsize distributionsCorrelating Structureelectron tomographyperformancesphere shapesHgTe NCsSuch pointhole trap densityHgTe Nanocrystal Films HgTe nanocry...tripod HgTe NCs