posted on 2015-04-22, 00:00authored bySung Hun Jin, Seung-Kyun Kang, In-Tak Cho, Sang Youn Han, Ha Uk Chung, Dong Joon Lee, Jongmin Shin, Geun Woo Baek, Tae-il Kim, Jong-Ho Lee, John A. Rogers
This paper presents device designs,
circuit demonstrations, and
dissolution kinetics for amorphous indium–gallium–zinc
oxide (a-IGZO) thin film transistors (TFTs) comprised completely of
water-soluble materials, including SiNx, SiOx, molybdenum, and poly(vinyl alcohol)
(PVA). Collections of these types of physically transient a-IGZO TFTs
and 5-stage ring oscillators (ROs), constructed with them, show field
effect mobilities (∼10 cm2/Vs), on/off ratios (∼2
× 106), subthreshold slopes (∼220 mV/dec),
Ohmic contact properties, and oscillation frequency of 5.67 kHz at
supply voltages of 19 V, all comparable to otherwise similar devices
constructed in conventional ways with standard, nontransient materials.
Studies of dissolution kinetics for a-IGZO films in deionized water,
bovine serum, and phosphate buffer saline solution provide data of
relevance for the potential use of these materials and this technology
in temporary biomedical implants.