Vertical Heterostructures of Layered Metal Chalcogenides by van der Waals Epitaxy
journal contributionposted on 11.06.2014, 00:00 by Xingwang Zhang, Fei Meng, Jeffrey R. Christianson, Christian Arroyo-Torres, Mark A. Lukowski, Dong Liang, J. R. Schmidt, Song Jin
We report a facile chemical vapor deposition (CVD) growth of vertical heterostructures of layered metal dichalcogenides (MX2) enabled by van der Waals epitaxy. Few layers of MoS2, WS2, and WSe2 were grown uniformly onto microplates of SnS2 under mild CVD reaction conditions (<500 °C) and the heteroepitaxy between them was confirmed using cross-sectional transmission electron microscopy (TEM) and unequivocally characterized by resolving the large-area Moiré patterns that appeared on the basal planes of microplates in conventional TEM (nonsectioned). Additional photoluminescence peaks were observed in heterostructures of MoS2–SnS2, which can be understood with electronic structure calculations to likely result from electronic coupling and charge separation between MoS2 and SnS2 layers. This work opens up the exploration of large-area heterostructures of diverse MX2 nanomaterials as the material platform for electronic structure engineering of atomically thin two-dimensional (2D) semiconducting heterostructures and device applications.
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basal planesSnS 2 layersmaterial platformstructure calculationsmetal dichalcogenidesvan der Waals epitaxyvan der Waals EpitaxyWe reportmicroplateMoS 2WSe 2Vertical HeterostructuresFew layersTEMcharge separationstructure engineeringtransmission electron microscopydevice applicationsSnS 2CVDchemical vapor depositionLayered Metal ChalcogenidesAdditional photoluminescence peakssemiconducting heterostructuresMX 2 nanomaterials