posted on 2016-03-16, 00:00authored byAgnieszka M. Gocalinska, Marina Manganaro, Emanuele Pelucchi
We present a selection of stack designs
for MOVPE grown InxGa1–xAs
metamorphic buffer layers following various convex-down compositional
continuous gradients of the In content, showing that defect generation
and strain can be managed in a variety of ways, some rather unexpected
(and unreported). Indeed, we observe that it is possible to grow surprisingly
thick tensile strained layers on metamorphic substrates, without significant
relaxation and defect generation. We believe our findings give significant
insights to the investigation of strain, relaxation, and defect distribution
in metamorphic buffer design, so to obtain properly engineered/tailored
structures (the most successful ones already finding applications
in device growth).