posted on 2018-02-14, 00:00authored byXiaoge Liu, Ju-Hyung Kang, Hongtao Yuan, Junghyun Park, Yi Cui, Harold Y. Hwang, Mark L. Brongersma
A metal
naturally displays dramatic changes in its optical properties
near the plasma frequency where the permittivity changes from a negative
to a positive value, and the material turns from highly reflective
to transparent. For many applications, it is desirable to achieve
such large optical changes by electrical gating. However, this is
challenging given the high carrier density of most metals, which causes
them to effectively screen externally applied electrical fields. Indium
tin oxide (ITO) is a low-electron-density metal that does afford electric
tuning of its permittivity in the infrared spectral range. Here, we
experimentally show the tunability of the plasma frequency of an ITO
thin film by changing its sheet carrier density via gating with an
ionic liquid. By applying moderate gate bias values up to 1.4 V, the
electron density increases in a thin (∼3 nm) accumulation layer
at the surface of the 15-nm-thick ITO film. This results in notable
blue shifts in the plasma frequency. These optical and electrical
changes are monitored simultaneously, which facilitates construction
of a model that provides a consistent picture for the dc electrical
and infrared optical properties. It can be used to quantitatively
predict the optical changes in the ITO layer with applied bias. This
work builds our understanding of electrically tunable plasmonic materials
and aids the design of ultracompact, active nanophotonic elements.