posted on 2017-03-02, 19:53authored byKunihiro Kihou, Hirotaka Nishiate, Atsushi Yamamoto, Chul-Ho Lee
As-based
Zintl compounds Ba1–xKxZn2As2 were prepared by solid-state
reaction followed by hot pressing. Ba1–xKxZn2As2 (x ≤ 0.02) crystallizes in the α-BaCu2S2-type structure (space group Pnma)
upon cooling from 900 °C, whereas it crystallizes in the ThCr2Si2-type structure (space group I4/mmm) for x ≥ 0.04. The
lattice thermal conductivities are almost equivalent for both crystal
structures with relatively low values of 0.8–1.1 W/mK at 773
K. The values are comparable to those of Sb-based Zintl compounds,
though Ba1–xKxZn2As2 consists of As atoms, which are
lighter than Sb atoms. The electrical resistivity and Seebeck coefficient
decreases with increasing x, indicating successful
hole doping by K substitution. The dimensionless figure-of-merit ZT
is 0.67 at 900 K for x = 0.02, opening a new class
of thermoelectric materials with the As-based 122 Zintl compounds.