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Thermochemical Hole Burning on a Triethylammonium Bis-7,7,8,8-tetracyanoquinodimethane Charge-Transfer Complex Using Single-Walled Carbon Nanotube Scanning Tunneling Microscopy Tips

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posted on 2005-03-03, 00:00 authored by Hailin Peng, Zhuo Chen, Lianming Tong, Xuechun Yu, Chunbo Ran, Zhongfan Liu
The present article describes a thermochemical hole burning (THB) effect on a charge-transfer complex triethylammonium bis-7,7,8,8-tetracyanoquinodimethane (TEA(TCNQ)2) using single-walled carbon nanotube (SWNT) scanning tunneling microscopy (STM) tips, which demonstrates the possibility of optimizing the THB storage materials and the writing tips for ultrahigh-density data storage. TEA(TCNQ)2 is proven to be a high-performance THB storage material, which gives deeper holes and larger hole depth-to-diameter ratio as compared to the previous materials dipropylammonium bis-7,7,8,8-tetracyanoquinodimethane and N-methyl-N-ethylmorpholinium bis-7,7,8,8-tetracyanoquinodimethane. Instead of conventional Pt/Ir STM tips, SWNT tips made by a unique chemical assembly technique we developed have been shown to be excellent writing tips for greatly decreasing the hole sizes and increasing the storage density. Possible reasons for the improvements on the storage performance were discussed.

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