The relationship
between the structure and properties is always a hot topic in the
luminescent material field. In this work, a new phosphor KBa2(PO3)5:Eu2+ (KBP:Eu) was prepared
by a high-temperature solid-state reaction method and characterized
by X-ray diffraction, energy-dispersive X-ray spectroscopy, photoluminescence
(PL), and electroluminescence studies. The polyphosphate host KBP
offers three lattice environments (K1, Ba1, and Ba2) for Eu2+ ions to realize broad-band emission from 380 to 700 nm under 345
nm excitation. The distributions of Eu2+ in the three lattice
sites can be proven by low-temperature PL and transient fluorescence
spectroscopy. Furthermore, temperature-dependent luminescence studies
for phosphor KBP:0.02Eu reveal that its luminescence intensity at
150 °C retains about 97% of the initial value at 25 °C.
By composing a 365 nm UV chip and KBP:0.02Eu, CaAlSiN3:Eu2+ phosphors, a warm white-light-emitting diode (WLED) was
obtained with a correlated color temperature of 5146 K and chromaticity
coordinates (0.3404, 0.3384). Therefore, KBP:Eu phosphor is a potential
cyan-emitting phosphor used for high-power WLEDs.