posted on 2018-04-04, 00:00authored byNicolas Goubet, Amardeep Jagtap, Clément Livache, Bertille Martinez, Hervé Portalès, Xiang Zhen Xu, Ricardo P. S. M. Lobo, Benoit Dubertret, Emmanuel Lhuillier
We report the synthesis of nanocrystals
with an optical feature
in the THz range. To do so, we develop a new synthetic procedure for
the growth of HgTe, HgSe, and HgS nanocrystals, with strong size tunability
from 5 to 200 nm. This is used to tune the absorption of the nanocrystals
all over the infrared range up to terahertz (from 2 to 65 μm
for absorption peak and even 200 μm for cutoff wavelength).
The interest for this procedure is not limited to large sizes since
for small objects we demonstrate low aggregation and good shape control
(i.e., spherical object) while using nonexpansive and simple mercury
halogenide precursors. By integrating these nanocrystals into an electrolyte-gated
transistor, we evidence a change of carrier density from p-doped to
n-doped as the confinement is vanishing.