posted on 2018-03-26, 00:00authored byMartin Friedl, Kris Cerveny, Pirmin Weigele, Gozde Tütüncüoglu, Sara Martí-Sánchez, Chunyi Huang, Taras Patlatiuk, Heidi Potts, Zhiyuan Sun, Megan O. Hill, Lucas Güniat, Wonjong Kim, Mahdi Zamani, Vladimir G. Dubrovskii, Jordi Arbiol, Lincoln J. Lauhon, Dominik M. Zumbühl, Anna Fontcuberta i Morral
Topological
qubits based on Majorana Fermions have the potential
to revolutionize the emerging field of quantum computing by making
information processing significantly more robust to decoherence. Nanowires
are a promising medium for hosting these kinds of qubits, though branched
nanowires are needed to perform qubit manipulations. Here we report
a gold-free templated growth of III–V nanowires by molecular
beam epitaxy using an approach that enables patternable and highly
regular branched nanowire arrays on a far greater scale than what
has been reported thus far. Our approach relies on the lattice-mismatched
growth of InAs on top of defect-free GaAs nanomembranes yielding laterally
oriented, low-defect InAs and InGaAs nanowires whose shapes are determined
by surface and strain energy minimization. By controlling nanomembrane
width and growth time, we demonstrate the formation of compositionally
graded nanowires with cross-sections less than 50 nm. Scaling the
nanowires below 20 nm leads to the formation of homogeneous InGaAs
nanowires, which exhibit phase-coherent, quasi-1D quantum transport
as shown by magnetoconductance measurements. These results are an
important advance toward scalable topological quantum computing.