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Download fileTelluride-Based Atomically Thin Layers of Ternary Two-Dimensional Transition Metal Dichalcogenide Alloys
journal contribution
posted on 19.09.2018, 00:00 authored by Amey Apte, Aravind Krishnamoorthy, Jordan Adam Hachtel, Sandhya Susarla, Juan Carlos Idrobo, Aiichiro Nakano, Rajiv K. Kalia, Priya Vashishta, Chandra Sekhar Tiwary, Pulickel M. AjayanAlloying
in two-dimensional (2D) transition metal dichalcogenides (TMDCs) has
allowed band gap engineering and phase transformation, as well as
modulation of electronic properties. However, most of the efforts
have been focused on alloying between transition metal cations. Among
those that emphasize alloying between chalcogenide anions, the sulfide–selenide
combinations are popular with a few reports on selenide–telluride
combinations. In this work, we show a facile chemical vapor deposition
method to obtain stable alloying between selenide and telluride anions
in monolayer MoSe2(1–x)Te2x alloy. These alloys retain the monolayer 2H symmetry
and show good photoluminescence and band gap tunability in the near-infrared
region. The nature and percentage of alloying is further confirmed
and quantified via AFM, XPS, and HAADF-STEM imaging and polarized
Raman spectroscopy. The stability of the two chalcogens in the monolayer
2H lattice is also consistent with thermodynamic phase mixing via
DFT simulations. The work demonstrates a straightforward method of
synthesizing telluride-based 2D TMDC alloys for further studies and
emerging applications.
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Telluride-Based Atomicallytransition metal dichalcogenidesband gap tunabilitycombinationXPSselenideTe 2 x alloymonolayer 2 H latticealloyingAFMRaman spectroscopysynthesizing telluride-based 2 D TMDC alloyschalcogenide anionsTernary Two-Dimensional Transition Metal Dichalcogenide Alloys Alloyingband gap engineeringDFT simulationstransition metal cationstelluride anionsmonolayer 2 H symmetrychemical vapor deposition methodnear-infrared regionHAADF-STEM imagingphase transformation