Surface Oxidation of Bi2(Te,Se)3 Topological Insulators Depends on Cleavage Accuracy

Thomas, Conor
R.; Vallon, Matthew K.; Frith, Matthew
G.; Sezen, Hikmet; Kushwaha, Satya K.; Cava, Robert J.; Schwartz, Jeffrey; Bernasek, Steven L.

doi:10.1021/acs.chemmater.5b03923.s001

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Surface Oxidation of Bi₂(Te,Se)₃ Topological Insulators Depends on Cleavage Accuracy

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posted on 2016-01-12, 00:00 authored by Conor R. Thomas, Matthew K. Vallon, Matthew G. Frith, Hikmet Sezen, Satya K. Kushwaha, Robert J. Cava, Jeffrey Schwartz, Steven L. Bernasek

Surface Oxidation of Bi₂(Te,Se)₃ Topological Insulators Depends on Cleavage Accuracy

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Depend Bi Topological Surface Oxidation Insulator Cleavage AccuracySurface Oxidation

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Surface Oxidation of Bi2(Te,Se)3 Topological Insulators Depends on Cleavage Accuracy

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Surface Oxidation of Bi₂(Te,Se)₃ Topological Insulators Depends on Cleavage Accuracy