Surface Oxidation of Bi2(Te,Se)3 Topological Insulators Depends on Cleavage Accuracy

Thomas, Conor
R.; Vallon, Matthew K.; Frith, Matthew
G.; Sezen, Hikmet; Kushwaha, Satya K.; Cava, Robert J.; Schwartz, Jeffrey; Bernasek, Steven L.

doi:10.1021/acs.chemmater.5b03923.s001

Surface Oxidation of Bi2(Te,Se)3 Topological Insulators Depends on Cleavage Accuracy

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posted on 2016-01-12, 00:00 authored by Conor R. Thomas, Matthew K. Vallon, Matthew G. Frith, Hikmet Sezen, Satya K. Kushwaha, Robert J. Cava, Jeffrey Schwartz, Steven L. Bernasek

Surface Oxidation of Bi2(Te,Se)3 Topological Insulators Depends on Cleavage Accuracy

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DOI - Is supplement to Surface Oxidation of Bi2(Te,Se)3 Topological Insulators Depends on Cleavage Accuracy

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Depend Bi Topological Surface Oxidation Insulator Cleavage AccuracySurface Oxidation

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Surface Oxidation of Bi<sub>2</sub>(Te,Se)<sub>3</sub> Topological Insulators Depends on Cleavage Accuracy

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