Nontoxic Sn-based perovskite light-emitting diodes (Pero-LEDs)
have been developing rapidly in recent years. However, high-quality
Sn-based perovskite films are hardly prepared because of the heavy
self-doping of Sn4+ in the as-prepared films. Most previous
reports indicate that the Sn4+ formation is mainly attributed
to the Sn2+ oxidation by external oxidizers. Here, for
the first time, we reveal that the disproportionation decomposition
of Sn2+ during the annealing process plays a critical role
in degrading device performance. To resolve this issue, we introduced
formamidine thiocyanate into the perovskite precursor as a thermal-sacrificial
agent to alleviate the disproportionation decomposition. Finally,
we achieved efficient Pero-LEDs with a maximum external quantum efficiency
of 5.3% and ultralow efficiency roll-off. This work provides a view
of understanding the instability of Sn-based perovskite and presents
a practical method to achieve efficient Sn-based Pero-LEDs by suppressing
the disproportionation decomposition of Sn2+.