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Download fileSuperior NO2 Sensing of MOF-Derived Indium-Doped ZnO Porous Hollow Cages
journal contribution
posted on 2020-08-04, 15:44 authored by Zhou Li, Yong Zhang, Hong Zhang, Yong Jiang, Jianxin YiHighly
sensitive semiconductor gas sensors hold great potential for applications
in trace gas detection. Reliable detection of ppb-level NO2 is crucial for environmental monitoring, which however still remains
a challenge. In this work, we demonstrated ultrahigh NO2 sensitivity of indium-doped ZnO porous hollow cages. Doping of In
into ZnO was accomplished via a facile one-pot MOF encapsulation–calcination
route, which led to remarkably enhanced NO2 sensing performance.
In-doped ZnO exhibited a large response of 3.7 to 10 ppb NO2, an ultrahigh sensitivity of 187.9 ppm–1, and
a limit of detection of 0.2 ppb, outperforming state-of-the-art ZnO-based
NO2 sensors. The superior NO2 sensing properties
were attributed to a synergy of excellent gas accessibility of the
porous hollow structure, abundant adsorption sites, and electronic
sensitization by In doping. Our findings could be extended to design
other porous doped ZnO oxides for high performance gas sensors and
other applications.