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Download fileSubstitutional Fluorine Doping of Large-Area Molybdenum Disulfide Monolayer Films for Flexible Inverter Device Arrays
journal contribution
posted on 2020-07-02, 13:19 authored by Sang-Soo Chee, Hanbyeol Jang, Kayoung Lee, Moon-Ho HamReliable
and controllable doping of transition metal dichalcogenides
(TMDCs) is a mandatory requirement for practical large-scale electronic
applications. However, most of the literature on the doping methodologies
of TMDCs has focused on n-type doping and multilayer
TMDC rather than a monolayer one enabling large-scale growth. Herein,
we report substitutional fluorine doping of a chemical vapor deposition
(CVD)-grown molybdenum disulfide (MoS2) monolayer film
using a delicate SF6 plasma treatment. Our SF6-treated MoS2 monolayer shows a p-type
doping effect with fluorine substitution. The doping concentration
is controlled by the plasma treatment time (2–4.9 atom %) while
maintaining the structural integrity of the MoS2 monolayer.
Such reliable and tunable substitutional doping is attributed to preventing
direct ion bombardment to the MoS2 monolayer by our gentle
plasma treatment system. Finally, we fabricated MoS2 homojunction
flexible inverter device arrays based on the pristine and SF6-treated MoS2 monolayer. A clear switching behavior
is observed, and the voltage gain is approximately 8 at an applied VDD of 2 V, which is comparable to that of CVD-grown
MoS2-based inverter devices reported previously. Obtained
voltage gain is also stable even after 500 bending cycles at an applied
strain of 0.5%.
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Keywords
inverter device arraystunable substitutional dopingtransition metal dichalcogenidesLarge-Area Molybdenum Disulfide Mon...Substitutional Fluorine DopingFlexible Inverter Device Arrays Rel...MoS 2 homojunctionObtained voltage gainplasma treatment systemTMDCreport substitutional fluorine dopingSF 6 plasma treatmenttype doping effectDDSF 6CVD-grown MoS 2MoS 2 monolayerchemical vapor deposition